Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Kingston 9965600-018.A00G 16GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Kingston 9965600-018.A00G 16GB

Kingston 9965600-018.A00G 16GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Kingston 9965600-018.A00G 16GB

需要考虑的原因
Kingston 9965600-018.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 42

左右 -31% 更低的延时
更快的读取速度，GB/s

10.4 9.7

测试中的平均数值
更快的写入速度，GB/s

8.9 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston 9965600-018.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 32
读取速度，GB/s

9.7 10.4
写入速度，GB/s

6.0 8.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 2386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston 9965600-018.A00G 16GB

Kingston 9965600-018.A00G 16GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Apacer Technology 78.CAGNK.4040B 8GB

Apacer Technology 78.CAGNK.4040B 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-2800C16-4GVR 4GB

G Skill Intl F4-2800C16-4GVR 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Avant Technology J644GU44J9266NQ 32GB

Avant Technology J644GU44J9266NQ 32GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB