Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 71

左右 41% 更低的延时

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

需要考虑的原因
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

报告一个错误

更快的读取速度，GB/s

15.6 9.7

测试中的平均数值
更快的写入速度，GB/s

6.4 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 71
读取速度，GB/s

9.7 15.6
写入速度，GB/s

6.0 6.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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Corsair CMD128GX4M8B3000C16 16GB

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Kingston KTP9W1-MID 16GB

Kingston KTP9W1-MID 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-2800C15-4GVRB 4GB

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Transcend Information TS512MSK64W6H 4GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

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Team Group Inc. TEAMGROUP-UD3-2400 8GB

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AMD R5316G1609U2K 8GB

Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB