Nanya Technology NT4GC64C88B1NS-DI 4GB vs Apacer Technology 78.D1GMM.AU10B 16GB

总分

Nanya Technology NT4GC64C88B1NS-DI 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

总分

Apacer Technology 78.D1GMM.AU10B 16GB

Apacer Technology 78.D1GMM.AU10B 16GB

差异规格评论

差异

Nanya Technology NT4GC64C88B1NS-DI 4GB

需要考虑的原因
Nanya Technology NT4GC64C88B1NS-DI 4GB

报告一个错误

Apacer Technology 78.D1GMM.AU10B 16GB

需要考虑的原因
Apacer Technology 78.D1GMM.AU10B 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 28

左右 -17% 更低的延时
更快的读取速度，GB/s

17 12.8

测试中的平均数值
更快的写入速度，GB/s

13.8 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64C88B1NS-DI 4GB

Apacer Technology 78.D1GMM.AU10B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 24
读取速度，GB/s

12.8 17.0
写入速度，GB/s

8.4 13.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2226 3089

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C15-8GTZR 8GB

Samsung M471B1G73DB0-YK0 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Samsung DDR3 8GB 1600MHz 8GB

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EVGA 16G-D4-2800-MR 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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