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Nanya Technology NT512T64U88B0BY-3C 512MB
A-DATA Technology AO2P26KC8T1-BC1S 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs A-DATA Technology AO2P26KC8T1-BC1S 8GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
A-DATA Technology AO2P26KC8T1-BC1S 8GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 13.6
    测试中的平均数值
A-DATA Technology AO2P26KC8T1-BC1S 8GB 需要考虑的原因
A-DATA Technology AO2P26KC8T1-BC1S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 71
    左右 -129% 更低的延时
  • 更快的写入速度，GB/s
    7.3 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 31
  • 读取速度，GB/s
    2,831.6 left arrow 13.6
  • 写入速度，GB/s
    1,322.6 left arrow 7.3
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    399 left arrow 2307

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB RAM的比较

PNY Electronics PNY 2GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
A-DATA Technology AD4S320038G22-B 8GB
A-DATA Technology AD4S320038G22-B 8GB
内存RAM
Nanya Technology M2F4G64CB8HG4N-CG 4GB
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Mushkin 99[2/7/4]202F 4GB
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SpecTek Incorporated PSD34G13332 4GB
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Crucial Technology CB8GU2666.C8ET 8GB
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Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
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内存RAM
SK Hynix HMT41GU6AFR8C-PB 8GB
SK Hynix HMT41GU6AFR8C-PB 8GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
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Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-3866C18-8GTZKW 8GB
G Skill Intl F4-3866C18-8GTZKW 8GB
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Samsung M3 78T3354BZ0-CCC 256MB
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Corsair CMK16GX4M2D3000C16 8GB
内存RAM
Samsung M379B5273CH0-CH9 4GB
Samsung M379B5273CH0-CH9 4GB
G Skill Intl F4-3600C16-16GTZR 16GB
G Skill Intl F4-3600C16-16GTZR 16GB
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Corsair CMT32GX4M4C3200C16 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
内存RAM
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Corsair CMD8GX3M2A2933C12 4GB
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Micron Technology 36ASF4G72PZ-2G3D1 32GB
内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-3466C16-16GTZ 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Corsair CMV8GX4M1A2666C18 8GB
内存RAM