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Nanya Technology NT512T64U88B0BY-3C 512MB
AMD R748G2606U2S 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs AMD R748G2606U2S 8GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15
    测试中的平均数值
AMD R748G2606U2S 8GB 需要考虑的原因
AMD R748G2606U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    61 left arrow 71
    左右 -16% 更低的延时
  • 更快的写入速度，GB/s
    8.9 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
AMD R748G2606U2S 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 61
  • 读取速度，GB/s
    2,831.6 left arrow 15.0
  • 写入速度，GB/s
    1,322.6 left arrow 8.9
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    399 left arrow 2028

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

AMD R748G2606U2S 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
SK Hynix HMA41GR7BJR4N-UH 8GB
SK Hynix HMA41GR7BJR4N-UH 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Kingston MSI24D4U7S8MH-8 8GB
Kingston MSI24D4U7S8MH-8 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3200C16-8GVGB 8GB
G Skill Intl F4-3200C16-8GVGB 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M378A2K43CB1-CRC 16GB
Samsung M378A2K43CB1-CRC 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston X3XCFP-HYA 8GB
Kingston X3XCFP-HYA 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Samsung M471A4G43AB1-CWE 32GB
Samsung M471A4G43AB1-CWE 32GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Apacer Technology 78.CAGPN.DF40B 8GB
Apacer Technology 78.CAGPN.DF40B 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
AMD R538G1601S2LS 8GB
AMD R538G1601S2LS 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2666C18-8GTZR 8GB
G Skill Intl F4-2666C18-8GTZR 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Apacer Technology 78.CAGP7.AZ20B 8GB
Apacer Technology 78.CAGP7.AZ20B 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CB8GU2400.C8JT 8GB
Crucial Technology CB8GU2400.C8JT 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM2400HLB-8G 8GB
Transcend Information JM2400HLB-8G 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905643-009.A00G 8GB
Kingston 9905643-009.A00G 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
内存RAM