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Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMD16GX4M4A2800C16 4GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Corsair CMD16GX4M4A2800C16 4GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Corsair CMD16GX4M4A2800C16 4GB

Corsair CMD16GX4M4A2800C16 4GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.2
    测试中的平均数值
Corsair CMD16GX4M4A2800C16 4GB 需要考虑的原因
Corsair CMD16GX4M4A2800C16 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 71
    左右 -87% 更低的延时
  • 更快的写入速度，GB/s
    10.6 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMD16GX4M4A2800C16 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 38
  • 读取速度，GB/s
    2,831.6 left arrow 14.2
  • 写入速度，GB/s
    1,322.6 left arrow 10.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    399 left arrow 2807

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Corsair CMD16GX4M4A2800C16 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965433-034.A00LF 4GB
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Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
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Corsair CMD64GX4M4B3333C16 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
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G Skill Intl F4-4000C17-8GVKB 8GB
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Patriot Memory (PDP Systems) PSD416G24002S 16GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Samsung M471A5244BB0-CRC 4GB
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Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-2133C15-8GVR 8GB
G Skill Intl F4-2133C15-8GVR 8GB
内存RAM
Corsair CML32GX3M4A1866C10 8GB
Corsair CML32GX3M4A1866C10 8GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170GB0-CK0 4GB
Samsung M393B5170GB0-CK0 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GR7JJR8N-VK 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
G Skill Intl F4-2400C17-16GIS 16GB
G Skill Intl F4-2400C17-16GIS 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Kllisre M378A1K43BB2-CRC 8GB
内存RAM