Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingmax Semiconductor GLAG42F-18---------- 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Kingmax Semiconductor GLAG42F-18---------- 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 14.5

测试中的平均数值

Kingmax Semiconductor GLAG42F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GLAG42F-18---------- 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 71

左右 -163% 更低的延时
更快的写入速度，GB/s

7.4 1,322.6

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingmax Semiconductor GLAG42F-18---------- 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 27
读取速度，GB/s

2,831.6 14.5
写入速度，GB/s

1,322.6 7.4
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

399 2356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM3X8GA2400C11Y2R 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

Corsair CMK32GX4M4A2133C15 8GB

Corsair CMK32GX4M4A2133C15 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

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Corsair CMRX8GD3000C16R4D 8GB

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Kingston 9965525-140.A00LF 8GB

Kingston 9905625-142.A00G 16GB

Kingston 9905625-142.A00G 16GB