RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9965600-018.A00G 16GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingston 9965600-018.A00G 16GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Kingston 9965600-018.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
10.4
测试中的平均数值
需要考虑的原因
Kingston 9965600-018.A00G 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
71
左右 -122% 更低的延时
更快的写入速度,GB/s
8.9
1,322.6
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9965600-018.A00G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
32
读取速度,GB/s
2,831.6
10.4
写入速度,GB/s
1,322.6
8.9
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
399
2386
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Kingston 9965600-018.A00G 16GB RAM的比较
Kingston 9905458-017.A01LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Elpida EBJ41UF8BDU5-GN-F 4GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Kingston KP4T2F-PSB 4GB
Corsair CM4X4GF2400C16S2 4GB
Kingston ACR256X64D2S800C6 2GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Samsung M471B5674QH0-YK0 2GB
Corsair CMSX16GX4M1A2400C16 16GB
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
Corsair CM3B4G2C1600L9 4GB
Kllisre M471A3243BB0-CP50 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
Samsung M378B5173EB0-YK0 4GB
Corsair CM4X16GE2133C15S2 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMK8GX4M1Z3600C18 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston KHX2133C14D4/4G 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Shenzhen Technology Co Ltd 8GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Samsung M378A2K43CB1-CTD 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Teikon TMA851U6AFR6N-UHHC 4GB
报告一个错误
×
Bug description
Source link