Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingston HP32D4U8D8HC-16X 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Kingston HP32D4U8D8HC-16X 16GB

Kingston HP32D4U8D8HC-16X 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 16.9

测试中的平均数值

Kingston HP32D4U8D8HC-16X 16GB

需要考虑的原因
Kingston HP32D4U8D8HC-16X 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 71

左右 -145% 更低的延时
更快的写入速度，GB/s

15.3 1,322.6

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston HP32D4U8D8HC-16X 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 29
读取速度，GB/s

2,831.6 16.9
写入速度，GB/s

1,322.6 15.3
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

399 3574

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS16G4D240FSB.16FAD 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F4-3333C16-8GTZSK 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Micron Technology TEAMGROUP-UD4-2133 16GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB