Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingston KHX2400C1C14/16G 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Kingston KHX2400C1C14/16G 16GB

Kingston KHX2400C1C14/16G 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 15.6

测试中的平均数值

Kingston KHX2400C1C14/16G 16GB

需要考虑的原因
Kingston KHX2400C1C14/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 71

左右 -137% 更低的延时
更快的写入速度，GB/s

7.9 1,322.6

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston KHX2400C1C14/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 30
读取速度，GB/s

2,831.6 15.6
写入速度，GB/s

1,322.6 7.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

399 2244

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS824A.C8FDD1 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Micron Technology 16ATF2G64HZ-2G6E3 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

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G Skill Intl F4-2133C15-8GRR 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMK64GX4M4D3600C18 16GB

Corsair CMK64GX4M4D3600C18 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-3600C14-16GTZR 16GB

G Skill Intl F4-3600C14-16GTZR 16GB