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Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
14.7
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
71
左右 -115% 更低的延时
更快的写入速度,GB/s
10.2
1,322.6
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
33
读取速度,GB/s
2,831.6
14.7
写入速度,GB/s
1,322.6
10.2
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
399
2764
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB RAM的比较
A-DATA Technology AD4S3200316G22-BHYD 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMSO32GX4M2A2133C15 16GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT8G4DFD8213.C16FDD2 8GB
SK Hynix HYMP125S64CP8-S6 2GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Kingston KVR800D2N6/2G 2GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Kingston 9905471-076.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology ILG8GS2400A 8GB
Samsung M471B5674QH0-YK0 2GB
Corsair CM4S16GL3200K18K2 16GB
Team Group Inc. Team-Elite-1333 4GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-4000C19-8GTZKW 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9905783-025.A01G 16GB
报告一个错误
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Bug description
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