Nanya Technology NT8GA64D88CX3S-JR 8GB vs Samsung M471A4G43AB1-CWE 32GB

总分

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

总分

Samsung M471A4G43AB1-CWE 32GB

Samsung M471A4G43AB1-CWE 32GB

差异规格评论

差异

Nanya Technology NT8GA64D88CX3S-JR 8GB

需要考虑的原因
Nanya Technology NT8GA64D88CX3S-JR 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 45

左右 16% 更低的延时

Samsung M471A4G43AB1-CWE 32GB

需要考虑的原因
Samsung M471A4G43AB1-CWE 32GB

报告一个错误

更快的读取速度，GB/s

15.6 14.2

测试中的平均数值
更快的写入速度，GB/s

12.8 9.8

测试中的平均数值

规格

完整的技术规格清单

Nanya Technology NT8GA64D88CX3S-JR 8GB

Samsung M471A4G43AB1-CWE 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 45
读取速度，GB/s

14.2 15.6
写入速度，GB/s

9.8 12.8
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2451 2925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR512X64D3S13C9G 4GB

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Corsair CMR16GX4M2E4266C19 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Corsair CMK16GX4M2A2400C16 8GB

Corsair CMK16GX4M2A2400C16 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 9965600-018.A00G 16GB

Kingston 9965600-018.A00G 16GB