Patriot Memory (PDP Systems) 160C0 V3 Series 8GB vs Corsair CMZ16GX3M2A1600C9 8GB

总分

Patriot Memory (PDP Systems) 160C0 V3 Series 8GB

Patriot Memory (PDP Systems) 160C0 V3 Series 8GB

总分

Corsair CMZ16GX3M2A1600C9 8GB

Corsair CMZ16GX3M2A1600C9 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 160C0 V3 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 160C0 V3 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 40

左右 10% 更低的延时
更快的写入速度，GB/s

9.3 8.7

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Corsair CMZ16GX3M2A1600C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1600C9 8GB

报告一个错误

更快的读取速度，GB/s

14.3 14.2

测试中的平均数值

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 160C0 V3 Series 8GB

Corsair CMZ16GX3M2A1600C9 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

36 40
读取速度，GB/s

14.2 14.3
写入速度，GB/s

9.3 8.7
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-10600, 1.5V, CAS Supported: 6 7 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2513 2430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Samsung M395T2863QZ4-CF76 1GB

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Kingmax Semiconductor GLLF62F-C6---------- 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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G Skill Intl F4-3000C15-4GTZ 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingmax Semiconductor GLLG42F-18---------- 8GB