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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Avant Technology W6451U66J7240ND 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Avant Technology W6451U66J7240ND 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Avant Technology W6451U66J7240ND 4GB

Avant Technology W6451U66J7240ND 4GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 75
    左右 53% 更低的延时
  • 更快的写入速度，GB/s
    9.6 left arrow 7.6
    测试中的平均数值
Avant Technology W6451U66J7240ND 4GB 需要考虑的原因
Avant Technology W6451U66J7240ND 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 13.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Avant Technology W6451U66J7240ND 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 75
  • 读取速度，GB/s
    13.7 left arrow 15.6
  • 写入速度，GB/s
    9.6 left arrow 7.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 1717

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Avant Technology W6451U66J7240ND 4GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Avant Technology W6451U66J7240ND 4GB
Avant Technology W6451U66J7240ND 4GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Corsair CMK8GX4M2B4000C19 4GB
Corsair CMK8GX4M2B4000C19 4GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9905678-007.A00G 8GB
Kingston 9905678-007.A00G 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMWX16GC3600C18W2D 16GB
Corsair CMWX16GC3600C18W2D 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Avant Technology J644GU44J2320NF 32GB
Avant Technology J644GU44J2320NF 32GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-8GTRS 8GB
G Skill Intl F4-3200C16-8GTRS 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMR16GX4M2A2666C16 8GB
Corsair CMR16GX4M2A2666C16 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3000C15-4GVRB 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
SK Hynix HMA82GR7MFR4N-UH 16GB
SK Hynix HMA82GR7MFR4N-UH 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9965600-018.A00G 16GB
Kingston 9965600-018.A00G 16GB
内存RAM