Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 37

左右 5% 更低的延时

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

报告一个错误

更快的读取速度，GB/s

16.9 13.7

测试中的平均数值
更快的写入速度，GB/s

13.8 9.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 37
读取速度，GB/s

13.7 16.9
写入速度，GB/s

9.6 13.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2312 3170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Samsung M378B5773DH0-CH9 2GB

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V-Color Technology Inc. TL48G30S8KGRGB15 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Crucial Technology BL16G36C16U4B.M16FE1 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CM4X4GF2666C16K4 4GB

Corsair CM4X4GF2666C16K4 4GB