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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CM4X16GE2933C19S2 16MB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Corsair CM4X16GE2933C19S2 16MB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Corsair CM4X16GE2933C19S2 16MB

Corsair CM4X16GE2933C19S2 16MB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
Corsair CM4X16GE2933C19S2 16MB 需要考虑的原因
Corsair CM4X16GE2933C19S2 16MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 35
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    14.1 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 9.6
    测试中的平均数值

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CM4X16GE2933C19S2 16MB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 32
  • 读取速度，GB/s
    13.7 left arrow 14.1
  • 写入速度，GB/s
    9.6 left arrow 13.9
  • 内存带宽，mbps
    12800 left arrow no data
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow , 1.20000005, CAS Supported:
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    2312 left arrow 2918

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Corsair CM4X16GE2933C19S2 16MB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CM4X16GE2933C19S2 16MB
Corsair CM4X16GE2933C19S2 16MB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
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