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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK32GX4M4D3200C16 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Corsair CMK32GX4M4D3200C16 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Corsair CMK32GX4M4D3200C16 8GB

Corsair CMK32GX4M4D3200C16 8GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
Corsair CMK32GX4M4D3200C16 8GB 需要考虑的原因
Corsair CMK32GX4M4D3200C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 35
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK32GX4M4D3200C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 25
  • 读取速度，GB/s
    13.7 left arrow 15.7
  • 写入速度，GB/s
    9.6 left arrow 12.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 3139

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Corsair CMK32GX4M4D3200C16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK32GX4M4D3200C16 8GB
Corsair CMK32GX4M4D3200C16 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
G Skill Intl F4-3200C16-8GVKBN 8GB
G Skill Intl F4-3200C16-8GVKBN 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Panram International Corporation W4N2400PS-8G 8GB
Panram International Corporation W4N2400PS-8G 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston XRMWRN-HYA 16GB
Kingston XRMWRN-HYA 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Corsair CMK16GX4M2B3000C15 8GB
Corsair CMK16GX4M2B3000C15 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9965589-033.D00G 8GB
Kingston 9965589-033.D00G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5625-015.A00G 16GB
Kingston 99U5625-015.A00G 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
内存RAM
Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-2400C15-8GRR 8GB
G Skill Intl F4-2400C15-8GRR 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-2666C18-8GTZR 8GB
G Skill Intl F4-2666C18-8GTZR 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-2400C15-8GNT 8GB
G Skill Intl F4-2400C15-8GNT 8GB
内存RAM