Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Corsair CMU32GX4M2A2400C14 16GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Corsair CMU32GX4M2A2400C14 16GB

Corsair CMU32GX4M2A2400C14 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Corsair CMU32GX4M2A2400C14 16GB

需要考虑的原因
Corsair CMU32GX4M2A2400C14 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 35

左右 -46% 更低的延时
更快的读取速度，GB/s

16.5 13.7

测试中的平均数值
更快的写入速度，GB/s

12.1 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMU32GX4M2A2400C14 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 24
读取速度，GB/s

13.7 16.5
写入速度，GB/s

9.6 12.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2312 2982

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K43EB1-CWE 8GB

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Samsung M378B5673FH0-CH9 2GB

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMD32GX4M4B3200C16 8GB

Corsair CMD32GX4M4B3200C16 8GB

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Corsair CMD8GX3M2A2933C12 4GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB