Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Corsair CMWX8GF2666C16W4 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Corsair CMWX8GF2666C16W4 8GB

Corsair CMWX8GF2666C16W4 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

更快的读取速度，GB/s

13.7 13.4

测试中的平均数值

Corsair CMWX8GF2666C16W4 8GB

需要考虑的原因
Corsair CMWX8GF2666C16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 35

左右 -35% 更低的延时
更快的写入速度，GB/s

9.9 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMWX8GF2666C16W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 26
读取速度，GB/s

13.7 13.4
写入速度，GB/s

9.6 9.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2312 2563

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMWX8GF2666C16W4 8GB

Corsair CMWX8GF2666C16W4 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA41GU7AFR8N-TF 8GB

SK Hynix HMA41GU7AFR8N-TF 8GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Essencore Limited 8GBF1X08QFHH38-135-K 8GB

Essencore Limited 8GBF1X08QFHH38-135-K 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Panram International Corporation PUD43000C154G4NJW 4GB

Panram International Corporation PUD43000C154G4NJW 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

DSL Memory CIR-W4SUSS2408G 8GB

DSL Memory CIR-W4SUSS2408G 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Kingston KC5N22-MIE 16GB

Kingston KC5N22-MIE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Patriot Memory (PDP Systems) PSD48G240082 8GB

Patriot Memory (PDP Systems) PSD48G240082 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Panram International Corporation PUD43000C168G2NJR 8GB

Panram International Corporation PUD43000C168G2NJR 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology CT8G4DFS8266.C8FD1 8GB

Crucial Technology CT8G4DFS8266.C8FD1 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB