Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Crucial Technology CT8G4DFD8213.C16FHP 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

更快的写入速度，GB/s

9.6 9.0

测试中的平均数值

Crucial Technology CT8G4DFD8213.C16FHP 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FHP 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 35

左右 -17% 更低的延时
更快的读取速度，GB/s

15.2 13.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 30
读取速度，GB/s

13.7 15.2
写入速度，GB/s

9.6 9.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2312 2355

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Wilk Elektronik S.A. W-HK26S16G 16GB

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Corsair CMK16GX4M1A2400C16 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

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Kingston KHX3200C20S4/32GX 32GB

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A-DATA Technology AD73I1B1672EG 2GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

Ramsta Ramsta-2666MHz-4G 4GB

Ramsta Ramsta-2666MHz-4G 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

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Strontium EVMT8G1600U86S 8GB

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Kingston 9965690-002.A00G 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

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Kingston KHX2133C11D3/4GX 4GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB