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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Crucial Technology CT8G4DFRA266.C4FE 8GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Crucial Technology CT8G4DFRA266.C4FE 8GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
更快的写入速度,GB/s
9.6
9.0
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4DFRA266.C4FE 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
35
左右 -6% 更低的延时
更快的读取速度,GB/s
13.8
13.7
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
33
读取速度,GB/s
13.7
13.8
写入速度,GB/s
9.6
9.0
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2312
2553
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB RAM的比较
Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-2666C12-8GTXD 8GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Kingston 99U5584-017.A00LF 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Kingston 9965525-018.A00LF 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M2D3600C16 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Samsung M393A1G40DB0-B`B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW128GX4M8C3000C16 16GB
Samsung M471B5273EB0-CK0 4GB
Kingston KHX2400C15D4/8G 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
TwinMOS 9DNPBNZB-TATP 4GB
Kingston K821PJ-MIB 16GB
AMD R5S38G1601U2S 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
×
Bug description
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