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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C14-8GVK 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-3200C14-8GVK 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
G Skill Intl F4-3200C14-8GVK 8GB

G Skill Intl F4-3200C14-8GVK 8GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
G Skill Intl F4-3200C14-8GVK 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GVK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 35
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    19.9 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C14-8GVK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 24
  • 读取速度，GB/s
    13.7 left arrow 19.9
  • 写入速度，GB/s
    9.6 left arrow 15.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 3779

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

G Skill Intl F4-3200C14-8GVK 8GB RAM的比较

Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
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最新比较

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内存RAM
G Skill Intl F5-6000J3636F16G 16GB
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G Skill Intl F4-2400C15-8GRR 8GB
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内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
内存RAM
PUSKILL PJ8TFK1GM8 8GB
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内存RAM
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A-DATA Technology DDR4 2400 2OZ 8GB
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