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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-4GVK 4GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-3200C16-4GVK 4GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
G Skill Intl F4-3200C16-4GVK 4GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3200C16-4GVK 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
35
左右 -25% 更低的延时
更快的读取速度,GB/s
17.5
13.7
测试中的平均数值
更快的写入速度,GB/s
13.7
9.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-4GVK 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
28
读取速度,GB/s
13.7
17.5
写入速度,GB/s
9.6
13.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2312
2929
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
G Skill Intl F4-3200C16-4GVK 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD AE34G2139U2 4GB
Kingston HP32D4U2S8MR-8 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386A8K40BM1-CRC 64GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston X6TCK6-MIE 32GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-4GVK 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-4133C19-8GTZA 8GB
A-DATA Technology DQVE1908 512MB
Kingston 9965669-018.A00G 16GB
Samsung 1600 CL10 Series 8GB
Samsung M393A4K40CB2-CTD 32GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
A-DATA Technology DDR3L 1600G 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Apacer Technology 78.01G86.9H50C 1GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
报告一个错误
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Bug description
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