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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL15-17-17 D4-3000 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Golden Empire CL15-17-17 D4-3000 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Golden Empire CL15-17-17 D4-3000 8GB

Golden Empire CL15-17-17 D4-3000 8GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
Golden Empire CL15-17-17 D4-3000 8GB 需要考虑的原因
Golden Empire CL15-17-17 D4-3000 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 35
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL15-17-17 D4-3000 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 32
  • 读取速度，GB/s
    13.7 left arrow 17.3
  • 写入速度，GB/s
    9.6 left arrow 12.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 3023

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Golden Empire CL15-17-17 D4-3000 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL15-17-17 D4-3000 8GB
Golden Empire CL15-17-17 D4-3000 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3000C15-8GVKB 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Corsair CM4X16GC3200C16K4 16GB
Corsair CM4X16GC3200C16K4 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
SK Hynix GKE800SO102408-2400 8GB
SK Hynix GKE800SO102408-2400 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Kingston 9965600-023.A00G 16GB
Kingston 9965600-023.A00G 16GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M474A4G43MB1-CTD 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX2666C15/16GX 16GB
Kingston KHX2666C15/16GX 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2400C17-4GNT 4GB
G Skill Intl F4-2400C17-4GNT 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston 9905734-102.A00G 32GB
Kingston 9905734-102.A00G 32GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Apacer Technology 78.C2GFL.C720B 8GB
Apacer Technology 78.C2GFL.C720B 8GB
内存RAM