Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 86

左右 59% 更低的延时
更快的读取速度，GB/s

13.7 12.1

测试中的平均数值
更快的写入速度，GB/s

9.6 5.7

测试中的平均数值

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 86
读取速度，GB/s

13.7 12.1
写入速度，GB/s

9.6 5.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2312 1220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 2GB-DDR2 800Mhz 2GB

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Gloway International (HK) STKD4GAM2133-F 8GB

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Kingston 9905469-143.A00LF 4GB

Corsair CM4X8GE2400C14K4 8GB

Corsair CM4X8GE2400C14K4 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Corsair CMT32GX4M2C3000C15 16GB

Corsair CMT32GX4M2C3000C15 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

A-DATA Technology DDR3 1333G 2GB

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Kingston 99U5700-027.A00G 8GB

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

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G Skill Intl F4-4000C18-8GTZR 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-2400C15-16GFT 16GB

G Skill Intl F4-2400C15-16GFT 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

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Samsung M378B5673EH1-CF8 2GB

Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-2133C15-4GRS 4GB

G Skill Intl F4-2133C15-4GRS 4GB

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G Skill Intl F3-2400C11-8GSR 8GB

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Kllisre M378A1K43BB2-CRC 8GB

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Patriot Memory (PDP Systems) PSD22G6672 2GB

Apacer Technology 78.BAGMD.AF20B 4GB

Apacer Technology 78.BAGMD.AF20B 4GB