Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Kingston 9905678-029.A00G 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Kingston 9905678-029.A00G 8GB

Kingston 9905678-029.A00G 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

更快的读取速度，GB/s

13.7 12.6

测试中的平均数值
更快的写入速度，GB/s

9.6 6.9

测试中的平均数值

Kingston 9905678-029.A00G 8GB

需要考虑的原因
Kingston 9905678-029.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 -40% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 9905678-029.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 25
读取速度，GB/s

13.7 12.6
写入速度，GB/s

9.6 6.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2312 2068

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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G Skill Intl F4-3000C16-16GSXFB 16GB

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A-DATA Technology VDQVE1B16 2GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Avant Technology W644GU44J2320NH 32GB

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Crucial Technology CT32G4DFD8266.C16FE 32GB

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Samsung M378T5663QZ3-CF7 2GB

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G Skill Intl F4-3600C17-8GTZR 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB