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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston HP26D4U9S1ME-4 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Kingston HP26D4U9S1ME-4 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Kingston HP26D4U9S1ME-4 4GB

Kingston HP26D4U9S1ME-4 4GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
Kingston HP26D4U9S1ME-4 4GB 需要考虑的原因
Kingston HP26D4U9S1ME-4 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston HP26D4U9S1ME-4 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 28
  • 读取速度，GB/s
    13.7 left arrow 16.2
  • 写入速度，GB/s
    9.6 left arrow 12.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 2487

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Kingston HP26D4U9S1ME-4 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston HP26D4U9S1ME-4 4GB
Kingston HP26D4U9S1ME-4 4GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
G Skill Intl F4-3200C15-8GTZSK 8GB
G Skill Intl F4-3200C15-8GTZSK 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Teclast TLD416G26A30 16GB
Teclast TLD416G26A30 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Essencore Limited KD48GU880-26N160T 8GB
Essencore Limited KD48GU880-26N160T 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
G Skill Intl F4-3333C16-4GRKD 4GB
G Skill Intl F4-3333C16-4GRKD 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4133C19-8GTZA 8GB
G Skill Intl F4-4133C19-8GTZA 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Corsair CMSX8GX4M2A2666C18 4GB
Corsair CMSX8GX4M2A2666C18 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
内存RAM