Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Kingston KF3733C19D4/16GX 16GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Kingston KF3733C19D4/16GX 16GB

Kingston KF3733C19D4/16GX 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Kingston KF3733C19D4/16GX 16GB

需要考虑的原因
Kingston KF3733C19D4/16GX 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 35

左右 -9% 更低的延时
更快的读取速度，GB/s

17.8 13.7

测试中的平均数值
更快的写入速度，GB/s

13.4 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston KF3733C19D4/16GX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 32
读取速度，GB/s

13.7 17.8
写入速度，GB/s

9.6 13.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, , CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2312 3399

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Kingston ACR32D4U2S8HD-8X 8GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

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Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Corsair CMK256GX4M8A2400C16 32GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

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Gloway International (HK) STK4U2400D17041C 4GB