Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Micron Technology 16ATF2G64HZ-2G6E3 16GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Micron Technology 16ATF2G64HZ-2G6E3 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6E3 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 35

左右 -3% 更低的延时
更快的读取速度，GB/s

15.8 13.7

测试中的平均数值
更快的写入速度，GB/s

12.4 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 34
读取速度，GB/s

13.7 15.8
写入速度，GB/s

9.6 12.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 2902

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M3 78T5663RZ3-CF7 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology CT8G4DFS8266.K8FB 8GB