Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Transcend Information TS2GLH64V6B 16GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Transcend Information TS2GLH64V6B 16GB

Transcend Information TS2GLH64V6B 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Transcend Information TS2GLH64V6B 16GB

需要考虑的原因
Transcend Information TS2GLH64V6B 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 35

左右 -59% 更低的延时
更快的读取速度，GB/s

17.9 13.7

测试中的平均数值
更快的写入速度，GB/s

14.5 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Transcend Information TS2GLH64V6B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 22
读取速度，GB/s

13.7 17.9
写入速度，GB/s

9.6 14.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 3411

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Transcend Information TS2GLH64V6B 16GB

Transcend Information TS2GLH64V6B 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMW32GX4M2E3200C16 16GB

Corsair CMW32GX4M2E3200C16 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMU32GX4M2A2666C16 16GB

Corsair CMU32GX4M2A2666C16 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Apacer Technology 76.C102G.D170B 8GB

Apacer Technology 76.C102G.D170B 8GB

Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

Transcend Information JM3200HSE-32G 32GB

Transcend Information JM3200HSE-32G 32GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

V-Color Technology Inc. TL48G30S8KGRGB15 8GB

V-Color Technology Inc. TL48G30S8KGRGB15 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB