Patriot Memory (PDP Systems) PSD22G8002 2GB vs Corsair CMW16GX4M2C3600C18 8GB

总分

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

总分

Corsair CMW16GX4M2C3600C18 8GB

Corsair CMW16GX4M2C3600C18 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD22G8002 2GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD22G8002 2GB

报告一个错误

更快的读取速度，GB/s

4 18.3

测试中的平均数值
更快的写入速度，GB/s

2,109.3 15.6

测试中的平均数值

Corsair CMW16GX4M2C3600C18 8GB

需要考虑的原因
Corsair CMW16GX4M2C3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 60

左右 -122% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMW16GX4M2C3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 27
读取速度，GB/s

4,162.7 18.3
写入速度，GB/s

2,109.3 15.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

784 3615

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix GKE160UD102408-2400 16GB

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Samsung M471A1K43DB1-CTD 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB