RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C14-16GTZSW 16GB
比较
Patriot Memory (PDP Systems) PSD22G8002 2GB vs G Skill Intl F4-3200C14-16GTZSW 16GB
总分
Patriot Memory (PDP Systems) PSD22G8002 2GB
总分
G Skill Intl F4-3200C14-16GTZSW 16GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) PSD22G8002 2GB
报告一个错误
更快的读取速度,GB/s
4
20.6
测试中的平均数值
更快的写入速度,GB/s
2,109.3
16.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3200C14-16GTZSW 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
60
左右 -131% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C14-16GTZSW 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
26
读取速度,GB/s
4,162.7
20.6
写入速度,GB/s
2,109.3
16.7
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
784
4084
Patriot Memory (PDP Systems) PSD22G8002 2GB RAM的比较
Apacer Technology 75.A73AA.G03 2GB
Patriot Memory (PDP Systems) PSD22G80026 2GB
G Skill Intl F4-3200C14-16GTZSW 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
SK Hynix HMA451U6AFR8N-TF 4GB
A-DATA Technology DDR4 4133 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-4GTZ 4GB
Kingston 9905403-156.A00LF 2GB
Samsung M378A2K43EB1-CWE 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4800C19-8GTESC 8GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
A-DATA Technology DDR2 800G 2GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Kingston HP698656-154-KEB 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Corsair VS1GB800D2 1GB
Corsair CMK16GX4M2A2133C13 8GB
Samsung M393B2G70BH0-YK0 16GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
报告一个错误
×
Bug description
Source link