Patriot Memory (PDP Systems) PSD22G8002 2GB vs InnoDisk Corporation M4S0-8GSSOCIK 8GB

总分

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

总分

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD22G8002 2GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD22G8002 2GB

报告一个错误

更快的读取速度，GB/s

4 15.9

测试中的平均数值

InnoDisk Corporation M4S0-8GSSOCIK 8GB

需要考虑的原因
InnoDisk Corporation M4S0-8GSSOCIK 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 60

左右 -150% 更低的延时
更快的写入速度，GB/s

8.7 2,109.3

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD22G8002 2GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 24
读取速度，GB/s

4,162.7 15.9
写入速度，GB/s

2,109.3 8.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

784 2326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70DH0-YH9 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Kingston 9965525-018.A00LF 4GB

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Super Talent F26UB16GH 16GB

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Samsung M471B5173DB0-YK0 4GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3600C17-8GTZKW 8GB

G Skill Intl F4-3600C17-8GTZKW 8GB