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Patriot Memory (PDP Systems) PSD34G13332 4GB
SK Hynix HMT325U6CFR8C-H9 2GB

Patriot Memory (PDP Systems) PSD34G13332 4GB vs SK Hynix HMT325U6CFR8C-H9 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD34G13332 4GB

Patriot Memory (PDP Systems) PSD34G13332 4GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-H9 2GB

SK Hynix HMT325U6CFR8C-H9 2GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) PSD34G13332 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD34G13332 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.4 left arrow 7.8
    测试中的平均数值
SK Hynix HMT325U6CFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-H9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 40
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    13.6 left arrow 13.3
    测试中的平均数值

规格

完整的技术规格清单
Patriot Memory (PDP Systems) PSD34G13332 4GB
SK Hynix HMT325U6CFR8C-H9 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    40 left arrow 39
  • 读取速度，GB/s
    13.3 left arrow 13.6
  • 写入速度，GB/s
    8.4 left arrow 7.8
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2229 left arrow 1940

Patriot Memory (PDP Systems) PSD34G13332 4GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Kingston 99U5402-462.A00LF 4GB

SK Hynix HMT325U6CFR8C-H9 2GB RAM的比较

Kingston 9965525-155.A00LF 8GB
Crucial Technology CT25664BA1339.M8FK 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) PSD34G13332 4GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
SK Hynix HMT325U6CFR8C-H9 2GB
SK Hynix HMT325U6CFR8C-H9 2GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 99U5663-006.A00G 16GB
Kingston 99U5663-006.A00G 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3000C14-16GVK 16GB
G Skill Intl F4-3000C14-16GVK 16GB
内存RAM
Kingston 9905711-035.A00G 8GB
Kingston 9905711-035.A00G 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Transcend Information JM3200HLE-32G 32GB
Transcend Information JM3200HLE-32G 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X4GF2400Z16K4 4GB
Corsair CM4X4GF2400Z16K4 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung V-GeN D4S8GL24A8 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-2933C16-16GFX 16GB
G Skill Intl F4-2933C16-16GFX 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C15-16GFX 16GB
G Skill Intl F4-2400C15-16GFX 16GB
内存RAM