Patriot Memory (PDP Systems) PSD34G13332S 4GB vs Kingston SNY1333D3S9DR8/2G 2GB

总分

Patriot Memory (PDP Systems) PSD34G13332S 4GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

总分

Kingston SNY1333D3S9DR8/2G 2GB

Kingston SNY1333D3S9DR8/2G 2GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G13332S 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G13332S 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 121

左右 70% 更低的延时
更快的读取速度，GB/s

8.4 2.5

测试中的平均数值
更快的写入速度，GB/s

5.9 2.2

测试中的平均数值

Kingston SNY1333D3S9DR8/2G 2GB

需要考虑的原因
Kingston SNY1333D3S9DR8/2G 2GB

报告一个错误

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G13332S 4GB

Kingston SNY1333D3S9DR8/2G 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

36 121
读取速度，GB/s

8.4 2.5
写入速度，GB/s

5.9 2.2
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1435 425

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Patriot Memory (PDP Systems) PSD34G13332S 4GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

Kingston SNY1333D3S9DR8/2G 2GB

Kingston SNY1333D3S9DR8/2G 2GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Kingston 9905625-030.A00G 8GB

Kingston 9905625-030.A00G 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMD16GX4M2B3200C16 8GB

Corsair CMD16GX4M2B3200C16 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS4G4S240FSD.8FBD 4GB

Crucial Technology BLS4G4S240FSD.8FBD 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M393A2K43BB1-CPB 16GB

Samsung M393A2K43BB1-CPB 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

G Skill Intl F4-3200C16-8GTZSW 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO10240

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-2400C15-8GNS 8GB

G Skill Intl F4-2400C15-8GNS 8GB

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB