Patriot Memory (PDP Systems) PSD34G16002 4GB vs Kingston 9905622-057.A00G 4GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Kingston 9905622-057.A00G 4GB

Kingston 9905622-057.A00G 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

Kingston 9905622-057.A00G 4GB

需要考虑的原因
Kingston 9905622-057.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 39

左右 -22% 更低的延时
更快的读取速度，GB/s

16 14.7

测试中的平均数值
更快的写入速度，GB/s

11.8 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9905622-057.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 32
读取速度，GB/s

14.7 16.0
写入速度，GB/s

9.2 11.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2322 2563

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-17000CL9-4GBXLD 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3200C16-8GVK 8GB

G Skill Intl F4-3200C16-8GVK 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CM4X16GE2666C18S2 16GB

Corsair CM4X16GE2666C18S2 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Apacer Technology 78.C1GQB.4032B 8GB

Apacer Technology 78.C1GQB.4032B 8GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston 9905625-066.A00G 16GB

Kingston 9905625-066.A00G 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB