Patriot Memory (PDP Systems) PSD34G16002 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 72

左右 46% 更低的延时
更快的写入速度，GB/s

9.2 8.0

测试中的平均数值

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

报告一个错误

更快的读取速度，GB/s

15.3 14.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 72
读取速度，GB/s

14.7 15.3
写入速度，GB/s

9.2 8.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2322 1817

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GFX 8GB

G Skill Intl F4-3200C16-8GFX 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2400C15-16GVR 16GB

G Skill Intl F4-2400C15-16GVR 16GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

G Skill Intl F4-4000C17-8GVKB 8GB

G Skill Intl F4-4000C17-8GVKB 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3733C17-16GTZR 16GB

G Skill Intl F4-3733C17-16GTZR 16GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Maxsun MSD44G24Q0 4GB

Maxsun MSD44G24Q0 4GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F4-3000C16-8GVRB 8GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9965669-017.A00G 16GB

Kingston 9965669-017.A00G 16GB

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB