Peak Electronics 256X64M-67E 2GB vs A-DATA Technology AO2P26KC8T1-BC1S 8GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

A-DATA Technology AO2P26KC8T1-BC1S 8GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 13.6

测试中的平均数值

A-DATA Technology AO2P26KC8T1-BC1S 8GB

需要考虑的原因
A-DATA Technology AO2P26KC8T1-BC1S 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 39

左右 -26% 更低的延时
更快的写入速度，GB/s

7.3 1,597.0

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 31
读取速度，GB/s

5,022.9 13.6
写入速度，GB/s

1,597.0 7.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

753 2307

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston ACR26D4S9S8HJ-8 8GB

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Kingston 9905403-011.A03LF 2GB

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G Skill Intl F4-3733C17-16GTZSW 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 99U5429-007.A00LF 2GB

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Crucial Technology BL16G30C15U4B.16FE 16GB

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-2400C16-8GFT 8GB

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Samsung M471B1G73DB0-YK0 8GB

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Corsair CMK8GX4M2A2666C16 4GB

Corsair CMK8GX4M2A2666C16 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/8G 8GB

Kingston KHX2666C15D4/8G 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB