Peak Electronics 256X64M-67E 2GB vs G Skill Intl F4-2400C16-8GRS 8GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 15.4

测试中的平均数值

G Skill Intl F4-2400C16-8GRS 8GB

需要考虑的原因
G Skill Intl F4-2400C16-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 39

左右 -15% 更低的延时
更快的写入速度，GB/s

11.9 1,597.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-2400C16-8GRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 34
读取速度，GB/s

5,022.9 15.4
写入速度，GB/s

1,597.0 11.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

753 2780

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Apacer Technology 78.CAGP7.AFW0C 8GB

Apacer Technology 78.CAGP7.AFW0C 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Kingston 9905625-142.A00G 16GB

Kingston 9905625-142.A00G 16GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Kingston KHX2133C14/8G 8GB

Kingston KHX2133C14/8G 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Nanya Technology M2F2G64CB88D7N-CG 2GB

Nanya Technology M2F2G64CB88D7N-CG 2GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Transcend Information AQD-D4U4GN21-SG 4GB

Transcend Information AQD-D4U4GN21-SG 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Kingston KHX3466C16D4/8GX 8GB

Kingston KHX3466C16D4/8GX 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Apacer Technology 78.CAGP7.DFW0C 8GB

Apacer Technology 78.CAGP7.DFW0C 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX3200C20S4/32GX 32GB

Kingston KHX3200C20S4/32GX 32GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-2400C15-8GVR 8GB

G Skill Intl F4-2400C15-8GVR 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3600C18-16GTRS 16GB

G Skill Intl F4-3600C18-16GTRS 16GB