Peak Electronics 256X64M-67E 2GB vs Heoriady HX2666CX15D4/4G 4GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Heoriady HX2666CX15D4/4G 4GB

Heoriady HX2666CX15D4/4G 4GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 77

左右 49% 更低的延时
更快的读取速度，GB/s

5 14.7

测试中的平均数值

Heoriady HX2666CX15D4/4G 4GB

需要考虑的原因
Heoriady HX2666CX15D4/4G 4GB

报告一个错误

更快的写入速度，GB/s

7.6 1,597.0

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Heoriady HX2666CX15D4/4G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 77
读取速度，GB/s

5,022.9 14.7
写入速度，GB/s

1,597.0 7.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

753 1688

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4SFS824A.C8FBR2 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M393B5170FHD-CH9 4GB

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Nanya Technology NT4GC64B8HG0NF-CG 4GB

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AMD R538G1601U2S 8GB

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Ramaxel Technology RMUA5200MR78HAF-3200 8GB

Ramaxel Technology RMUA5200MR78HAF-3200 8GB

Kingston 99U5584-005.A00LF 4GB

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Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston ACR26D4U9S8HJ-8 8GB

Kingston ACR26D4U9S8HJ-8 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M391A1G43DB0-CPB 8GB

Samsung M391A1G43DB0-CPB 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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Wilk Elektronik S.A. GR3200D464L22S/16G 16GB