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PNY Electronics 4GBH2X02E99927-16 4GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB

PNY Electronics 4GBH2X02E99927-16 4GB vs Netac Technology Co Ltd EKBLUE4162417AD 8GB

总分
star star star star star
PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

总分
star star star star star
Netac Technology Co Ltd EKBLUE4162417AD 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

差异 规格 评论

差异

PNY Electronics 4GBH2X02E99927-16 4GB 需要考虑的原因
PNY Electronics 4GBH2X02E99927-16 4GB
报告一个错误
Netac Technology Co Ltd EKBLUE4162417AD 8GB 需要考虑的原因
Netac Technology Co Ltd EKBLUE4162417AD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 63
    左右 -163% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 5.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics 4GBH2X02E99927-16 4GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 24
  • 读取速度，GB/s
    6.1 left arrow 16.8
  • 写入速度，GB/s
    5.0 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 2946

PNY Electronics 4GBH2X02E99927-16 4GB RAM的比较

AMD R7416G2133U2S 16GB
Kingston KTP9W1-MIE 16GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
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内存RAM
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