PNY Electronics PNY 2GB vs AMD R744G2400U1S-UO 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

AMD R744G2400U1S-UO 4GB

AMD R744G2400U1S-UO 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 66

左右 59% 更低的延时

AMD R744G2400U1S-UO 4GB

需要考虑的原因
AMD R744G2400U1S-UO 4GB

报告一个错误

更快的读取速度，GB/s

16.7 13.8

测试中的平均数值
更快的写入速度，GB/s

8.5 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

AMD R744G2400U1S-UO 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 66
读取速度，GB/s

13.8 16.7
写入速度，GB/s

8.4 8.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 1912

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingmax Semiconductor GZOH23F-18---------- 16GB

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Kingston KHX2666C15D4/4G 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-4133C19-8GTZR 8GB

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Team Group Inc. TEAMGROUP-UD3-2400 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 9905744-066.A00G 32GB

Kingston 9905744-066.A00G 32GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

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G Skill Intl F4-2800C15-16GRKD 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB