PNY Electronics PNY 2GB vs AMD R748G2400S2S 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 135

左右 80% 更低的延时
更快的写入速度，GB/s

8.4 8.2

测试中的平均数值

AMD R748G2400S2S 8GB

需要考虑的原因
AMD R748G2400S2S 8GB

报告一个错误

更快的读取速度，GB/s

15.2 13.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

AMD R748G2400S2S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 135
读取速度，GB/s

13.8 15.2
写入速度，GB/s

8.4 8.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 1359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2666C15S4/8G 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Samsung M391A2K43BB1-CRC 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

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Patriot Memory (PDP Systems) PSD48G320081 8GB

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Peak Electronics 256X64M-67E 2GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-3000C15-16GVR 16GB

G Skill Intl F4-3000C15-16GVR 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Mushkin MRA4S293MMMF32G 32GB

Mushkin MRA4S293MMMF32G 32GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

SK Hynix HMA82GU6AFR8N-UH 16GB

SK Hynix HMA82GU6AFR8N-UH 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

Ramaxel Technology RMR1810EC58E8F1333 2GB

Ramaxel Technology RMR1810EC58E8F1333 2GB

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB