PNY Electronics PNY 2GB vs Corsair CM4X8GE2666C16K4 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CM4X8GE2666C16K4 8GB

Corsair CM4X8GE2666C16K4 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Corsair CM4X8GE2666C16K4 8GB

需要考虑的原因
Corsair CM4X8GE2666C16K4 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 -13% 更低的延时
更快的读取速度，GB/s

16.1 13.8

测试中的平均数值
更快的写入速度，GB/s

11.9 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CM4X8GE2666C16K4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 24
读取速度，GB/s

13.8 16.1
写入速度，GB/s

8.4 11.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3001

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2D3600C16 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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Kingston 99U5474-028.A00LF 4GB

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G Skill Intl F4-3200C15-16GVR 16GB

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A-DATA Technology AD73I1B1672EG 2GB

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Crucial Technology BL8G32C16U4BL.M8FE 8GB

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Kingston 9965516-112.A00LF 16GB

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Kingston 9905702-136.A00G 8GB

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Kingston 9965525-140.A00LF 8GB

Mushkin 99[2/7/4]198F 8GB

Mushkin 99[2/7/4]198F 8GB

TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology CT8G4DFRA266.C8FN 8GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB