PNY Electronics PNY 2GB vs Corsair CMD16GX4M4B3400C16 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMD16GX4M4B3400C16 4GB

Corsair CMD16GX4M4B3400C16 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Corsair CMD16GX4M4B3400C16 4GB

需要考虑的原因
Corsair CMD16GX4M4B3400C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

18.5 13.8

测试中的平均数值
更快的写入速度，GB/s

14.9 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMD16GX4M4B3400C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

13.8 18.5
写入速度，GB/s

8.4 14.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3593

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99P5471-002.AOOLF 4GB

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A-DATA Technology AM2P24HC8T1-BBFS 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

Apacer Technology 76.B305G.D500B 4GB

Apacer Technology 76.B305G.D500B 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

MemxPro Inc. D4S8GHIOFFC 8GB

MemxPro Inc. D4S8GHIOFFC 8GB

Samsung M471B1G73EB0-YK0 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Kingston KVR533D2N4 512MB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3200C16D4/32GX 32GB