PNY Electronics PNY 2GB vs Corsair CMT16GX4M2C3466C16 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMT16GX4M2C3466C16 8GB

Corsair CMT16GX4M2C3466C16 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Corsair CMT16GX4M2C3466C16 8GB

需要考虑的原因
Corsair CMT16GX4M2C3466C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 -35% 更低的延时
更快的读取速度，GB/s

17.1 13.8

测试中的平均数值
更快的写入速度，GB/s

14.3 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMT16GX4M2C3466C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 20
读取速度，GB/s

13.8 17.1
写入速度，GB/s

8.4 14.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3088

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5428-063.A00LF 8GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F4-3400C16-8GTZKW 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston KF2666C16S4/16G 16GB

Kingston KF2666C16S4/16G 16GB