PNY Electronics PNY 2GB vs Crucial Technology CT8G4DFS824A.M8FGM 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Crucial Technology CT8G4DFS824A.M8FGM 8GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Crucial Technology CT8G4DFS824A.M8FGM 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FGM 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 -23% 更低的延时
更快的读取速度，GB/s

18.2 13.8

测试中的平均数值
更快的写入速度，GB/s

12.6 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 22
读取速度，GB/s

13.8 18.2
写入速度，GB/s

8.4 12.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 3083

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. UD5-6400 16GB

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Kingston 9905471-001.A01LF 2GB

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Kingston KYXC0V-MIB 16GB

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A-DATA Technology AD73I1B1672EG 2GB

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Panram International Corporation D4N2400PS-8G 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-4266C17-8GTZRB 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BLS8G4S240FSD.16FBD 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Crucial Technology BLS4G4D26BFSC.8FBD2 4GB