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PNY Electronics PNY 2GB
G Skill Intl F4-3000C16-16GTZN 16GB

PNY Electronics PNY 2GB vs G Skill Intl F4-3000C16-16GTZN 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 31
    左右 13% 更低的延时
G Skill Intl F4-3000C16-16GTZN 16GB 需要考虑的原因
G Skill Intl F4-3000C16-16GTZN 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
G Skill Intl F4-3000C16-16GTZN 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 31
  • 读取速度，GB/s
    13.8 left arrow 17.5
  • 写入速度，GB/s
    8.4 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3861

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

G Skill Intl F4-3000C16-16GTZN 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2133C15-4GIS 4GB
G Skill Intl F4-2133C15-4GIS 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3000C16-16GTZN 16GB
G Skill Intl F4-3000C16-16GTZN 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-8GTRS 8GB
G Skill Intl F4-3200C16-8GTRS 8GB
内存RAM
Elpida EBJ21UE8BBS0-AE-F 2GB
Elpida EBJ21UE8BBS0-AE-F 2GB
Avant Technology J642GU42J5213N1 16GB
Avant Technology J642GU42J5213N1 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston KF3200C20S4/32GX 32MB
Kingston KF3200C20S4/32GX 32MB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMT64GX4M8X3000C15 8GB
Corsair CMT64GX4M8X3000C15 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMK64GX4M4C3333C16 16GB
Corsair CMK64GX4M4C3333C16 16GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-3333C16-8GTZKW 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-2800C17-8GVR 8GB
G Skill Intl F4-2800C17-8GVR 8GB
内存RAM