PNY Electronics PNY 2GB vs G Skill Intl F4-3200C16-8GVKB 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-3200C16-8GVKB 8GB

G Skill Intl F4-3200C16-8GVKB 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

G Skill Intl F4-3200C16-8GVKB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVKB 8GB

报告一个错误

更快的读取速度，GB/s

18.5 13.8

测试中的平均数值
更快的写入速度，GB/s

14.4 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-3200C16-8GVKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

13.8 18.5
写入速度，GB/s

8.4 14.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3457

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Samsung M471B5273DH0-CH9 4GB

Hyundai Inc GR26C16S8K2HU416 8GB

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Samsung M391B5673FH0-CH9 2GB

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AMD R7416G2400U2S 16GB

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Kingston 99U5474-037.A00LF 4GB

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Corsair CMU16GX4M2C3200C16 8GB