PNY Electronics PNY 2GB vs G Skill Intl F4-3600C16-32GTZR 32GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

G Skill Intl F4-3600C16-32GTZR 32GB

需要考虑的原因
G Skill Intl F4-3600C16-32GTZR 32GB

报告一个错误

更快的读取速度，GB/s

20.8 13.8

测试中的平均数值
更快的写入速度，GB/s

16.1 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-3600C16-32GTZR 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.8 20.8
写入速度，GB/s

8.4 16.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 3878

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Kingston 9965525-018.A00LF 4GB

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Kingston KF3600C17D4/8GX 8GB

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A-DATA Technology DDR3 1866 2OZ 4GB

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Crucial Technology CT8G4DFRA266.M4FE 8GB

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A-DATA Technology AO2P24HC8T1-BTBS 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB